My Light Diagram

Circuit diagram : Dual High Side Switch Controller Circuit Diagram One of the most frequent uses of n-channel MOSFET’s is as a voltage controlled switch. To ensure that the MOSFET delivers the full supply voltage to the load it is necessary for the gate voltage to be a few volts above the supply voltage level. This can be a problem if no other suitable higher volt-age sources are available for use elsewhere in the circuit. The LTC 1982 dual high-side switch controller from Lin-ear Technology (www.linear-tech.com) solves this problem by incorporating a voltage tripler circuit in the gate driver stage. The gate voltage is limited to +7.5 V which is 2.0 V above the IC’s maximum operating voltage. It can directly drive the gate of logic-level MOSFET with a VGS(th) from 1.0 V to 2.0 V. A suitable n-channel logic level MOSFET would be the BSP 295. This device can switch up to 1.5 A and is available in an SOT 233 SMD package.

The UCC27518 and UCC27519 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27518 and UCC27519 are capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 17 ns. The UCC27518 and UCC27519 provide 4-A source, 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V. The UCC27518 and UCC27519 are designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of -40°C to 140°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. Features Low-Cost, Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions Pin-to-Pin Compatible With TI’s TPS2828 and the TPS2829 4-A Peak Source and 4-A Peak Sink Symmetrical Drive Fast Propagati...